5/31/2023 0 Comments Burnout drift 3 advanced method![]() ![]() As a result, indium melts, and some portion of it absorbs into silicon (base material). In this method, a small indium dot or pellet or dot/pellet of any other type of impurity is placed on the surface of an N-type silicon wafer, both are heated up at a temperature higher than the melting point of indium(about 150 degrees centigrade) (as illustrated in the figure 2. And its junction capacitance is also greater due to a large junction area. Junction diodes produced through the alloying process are capable of high peak inverse voltage ratings and high current ratings. This method of construction of a PN junction is a very simple and easy one. Remember, the area of the grown junction diode is adequately large for passing or handling high currents (due to which its power rating is also high) Figure 1 Then this large-sized crystal is cut into several small-sized diodes. When the crystal is being pulled out through the material, P and N-type impurities are added turn by turn in order to produce a PN junction. Remember, that shaft has also to be rotated during this process. Then, this crystal is pushed out from melted semiconductor material slowly through a rod or shaft. This melted semiconductor material is kept in a crucible made of graphite (as shown in figure 1). In other words, according to the method of grown junction for constructing diodes, a crystal seed of desired impurity level is sunk in the melted semiconductor matter. This generated crystal is then cut and converted into small PN junctions. However, if the seed crystal is doped with N and P-type impurity one by one, it means that N and P-type layers are being produced on a semi crystal. If only P-type impurity has been pooled in solution, the grown crystal will be a P-type semiconductor. Now material stuck with the seed crystal has the same characteristics, as which seed has. Melted material that sticks with crystal seed becomes hard after having cooled down. Then seed crystal is rotated in solution at a pace that melted matter sticks to this seed. A small semiconductor crystal called seed is placed in this melted solution. In this method, a pure intrinsic semiconductor and a P-type impurity are provided heat to such an extent (placing it in a quartz crucible for production of a PN junction) that both matters meltdown and get dissolved in each other. This is the oldest and most popular method being used for the construction of a diode. ![]() PN junction can be produced through any one of the following junction methodsĪ brief detail of the above-mentioned chemical methods has been given below: Gallium arsenide (GaAs) is a new material, which has useful characteristics of silicon and germanium, thus application of this new material has rapidly been increasing. On the contrary, silicon can be operated at a high temperature compared to germanium, therefore, silicon is considered suitable for high-powered applications. ![]() ![]() As germanium has high electrical conduction as compared to silicon, therefore, it is enormously used in low and medium-powered diodes. Germanium (G e) and Silicon (S i) are the most extensively used materials as semiconductor diodes. The electrical properties of a semiconductor diode depend on the following two factors. Different types of junction methods- in this article, we will discuss different types of junction methods in very detail Grown Method, the Alloy method, Diffused Junction method, Epitaxial Growth junction method, Point Contact Junction method, Drift Field Junction method, Surface Barrier Junction method, Re-crystallized Junction method. ![]()
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